Please join us for this week's MiMs presentation:
Presented by Ying Wu
TODAY, Thursday, July 25, 2013 at 4:30pm
Room 703 Northwest Corner
Phase-change memory (PCM) is one of the leading candidates for next-generation data-storage devices. PCM stores information based on the organization of atoms in a material, typically those made of germanium, antimony, and tellurium (Ge2Sb2Te5 or GST). By applying an electrical pulse, GST can be switched reversibly between the amorphous and crystalline states, corresponding to “0” and “1” states. Moreover, the electrical resistance of the two states is substantially different, allowing the information to be read. The PCM-based chips are now moving towards the mainstream consumer market.
1. Breaking the speed limit of phase-change memory, D. Loke, S.R. Elliott. Science 336, 1566 (2012)
2. Phase-change materials: towards a universal memory? M. Wuttig Nature Materials, 4, 265 (2005)