Material Science & Engineering Colloquium
Date: April 25, 2008 from 2:00 pm to 3:00 pm EDT
Location: 214 S. W. Mudd

Contact: For further information regarding this event, please contact Chad Gurley by sending email to .
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Bookmark and Share Prof. Mehmet Sahiner
Seton Hall University
Physics Department
“Applications of a Local Structural Probe 
in Challenging Problems of Semiconductor Materials”

The continuous downward scaling of the complementary metal oxide semiconductor (CMOS) devices has enabled the Si-based semiconductor industry to meet the technological requirements such as high performance and low power consumption. However, the ever shrinking dimensions of the semiconductor devices are forcing the physical limits of the silicon based materials. The first challenge is in the transistor gate region. In order to increase the performance of the transistors, the SiO2 based “gate” that control the flow of electrons has become so small that it can no longer block the flow of current even when it is required. New materials are needed to replace the silicon based materials in these gate regions. The second problem involves the use of dopants in Si. Although transistors can shrink in size, the smaller devices still need to maintain the same charge requiring higher level of doping. One important emerging problem in doping above the solid solubility level is the formation of impurity clusters or precipitates causing electrical deactivation of the dopant. Solutions to both of these problems might rely on the careful correlations of the detailed local structural information and synthesis conditions. The novel applications of a powerful local probe, extended x-ray absorption spectroscopy (EXAFS), to these problems will be presented and the local structure and synthesis relations will be discussed..
Hosted by Prof. Noyan.