MS&E Colloquium - Cook
Date: October 03, 2008 from 2:00 pm to 3:00 pm EDT
Location: 214 S. W. Mudd
Contact: For further information regarding this event, please contact Chad Gurley by sending email to .
Info: Click Here to Visit Website.
Bookmark and Share

Nanocalorimetric Investigation of Interfacial Stability in Advanced Electronic Materials


L. P. Cook, R. E.  Cavicchi, W. Wong-Ng, N. Bassim, S.  Eustis, U. Kattner, C. Campbell, C. B.  Montgomery, W. F. Egelhoff, and M. D. Vaudin, NIST, Gaithersburg, MD


Interfacial stability is critical for the performance and reliability of highly integrated thin-film structures being developed for next-generation device applications. Thin-film nanocalorimetry, which can measure the thermal signatures associated with interfacial reaction, provides an efficient method for screening of interfacial stabilities. In this talk,  we describe use of a MEMS differential scanning calorimeter (DSC) with a sensor area of 66 μm x 120 um and a  detection limit of < 5 nJ to measure the enthalpy of interfacial reaction in 100 nm Ni/100 nm Si bilayers.  We demonstrate that the nanocalorimetric method can be used to investigate interfacial reaction kinetics over a wide range of heating temperatures up to 560 oC.  The capabilities and limitations of the approach for the study of interfacial reactions in dielectric materials is discussed.