MS&E Colloquium - Prof. Lin Shao, Texas A&M University
Date: January 29, 2010 from 2:00 pm to 3:00 pm EST
Location: Columbia University
Morningside Campus
S. W. Mudd, Room 214
Contact: For further information regarding this event, please contact Chad Gurley by sending email to .
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Application of radiation materials science: from microelectronics to nuclear reactors


Shao, Lin

Department of Nuclear Engineering

and Materials Science & Engineering Program

Texas A&M University


Radiation materials science studies fundamental ion-solid interaction and materials property changes upon ion bombardment. Wide interest in this field was generated in 1950s when structural components of first commercial nuclear power reactors showed severe degradation under harsh radiation environments. The study was further stimulated in 1970s when modern microelectronics fabrication shifted doping methods to ion implantation from thermal diffusion. Most recently, significant attention is attracted to meet the needs for the so called "nuclear energy renaissance", in which the next generation of nuclear power plants push the limits of materials science. For advanced reactor designs which involve extreme conditions with high temperature, stress and irradiation, development of radiation tolerant materials is desperately needed.


Over the past five decades, radiation materials science has matured. However, the revolutionary area of nano-materials science offers new possibilities and new challenges. The aim of this talk is to introduce our recent progress in radiation materials science in relation to advanced microelectronics fabrication and nuclear materials development. This talk gives a brief overview of the status and perspective of a few ion beam-assisted techniques in overcoming technology barriers in microelectronics processing. Then we discuss the materials issues in nuclear engineering and recent progress in developing radiation tolerant materials. For the technique of vacancy engineering, in which high energy co-implantations are used to introduce excessive vacancies near a Si surface region to suppress boron diffusion, we discuss its mechanisms and integration issues in device processing. For the technique of strain-facilitated ion cutting, in which a nanometer thick strained layer is buried in monocrystalline Si to provide H trapping and to initialize a smooth cracking for ultrathin layer transfer (<20 nm), we discuss the underlying physics and its application in fabrication of 3-D electronics and detectors. Finally, we discuss recent studies using nanostructured materials to develop extreme radiation tolerant material with capabilities of self damage repairing.


Lin Shao earned his B.S in Nuclear Physics from Peking University in 1997 and his Ph.D in Physics from the University of Houston in 2001. Before joining Texas A&M University, he was a Director's Postdoctoral Fellow at Los Alamos National Laboratory. Shao received NSF Career Award (2009), inaugural IBMM prize (2008) and Los Alamos National Laboratory Distinguished Postdoctoral Performance Award (2006) for his works in radiation materials science.