Moments in Materials - Ying Wu

Date: July 25, 2013 from 4:30 pm to 5:30 pm EDT
Location: Morningside Campus
Room 703 Northwest Corner
Contact: For further information regarding this event, please contact Dani Farrell by sending email to .

Please join us for this week's MiMs presentation:

"Phase-change memory"
Presented by Ying Wu
TODAY, Thursday, July 25, 2013 at 4:30pm
Room 703 Northwest Corner

Phase-change memory (PCM) is one of the leading candidates for next-generation data-storage devices. PCM stores information based on the organization of atoms in a material, typically those made of germanium, antimony, and tellurium (Ge2Sb2Te5 or GST). By applying an electrical pulse, GST can be switched reversibly between the amorphous and crystalline states, corresponding to 0 and 1 states. Moreover, the electrical resistance of the two states is substantially different, allowing the information to be read. The PCM-based chips are now moving towards the mainstream consumer market.

Selected references:
1. Breaking the speed limit of phase-change memory, D. Loke, S.R. Elliott. Science 336, 1566 (2012)
2. Phase-change materials: towards a universal memory? M. Wuttig Nature Materials, 4, 265 (2005)

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