MSE Colloquium - Prof. Chang-Beom Eom
Date: October 11, 2013 from 11:00 am to 12:00 pm EDT
Location: Room 214, S.W. Mudd
Contact: For further information regarding this event, please contact Wesley Hattan by sending email to or by calling 2128547860.
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Chang-Beom Eom
Department of Materials Science and Engineering, University of Wisconsin-Madison

"Oxide Nanoelectronics"
Oxide materials are the most abundant compound in the earth's crust and possess a wide range of electrical, optical, and magnetic properties. For instance, insulators, high quality metals, dielectrics, ferroelectrics, piezoelectrics, semiconductors, ferromagnetics, transparent conductors, superconductors, and nonlinear optic materials have all been produced using oxide materials.  Oxide materials have enormous potential, particularly as the fundamental building block of a new generation of electronic devices. We create these materials by artificially layering various atoms including oxygen at the single atomic level and discovering novel properties that are likely to find applications in electronic, magnetic, optical and electromechanical devices. I will discuss how our research [1-6] played a role in understanding the fundamental solid state phenomena at the atomic scale and the discovery of new materials so that we can use them to develop new oxide nanoelectronic devices.  Atomic layer control of novel oxide heterointerfaces may provide some of the answers that we need to continue the electronics revolution, particularly for nanoscale devices with new functionality that are currently being developed and can be applied to various fields.

1. "Mechanical Writing of Ferroelectric Polarization," Science, 336, 59 (2012)

2. "Giant piezoelectricity on Si for hyper-active MEMS," Science, 334, 958 (2011)

3. "Metallic and insulating oxide interfaces controlled by electronic correlations," Science, 331, 886 (2011)

4. "Sketched oxide single-electron transistor," Nature Nanotechnology, 6, 343 (2011)

5. "Creation of a two-dimensional electron gas at an oxide interface grown on silicon," Nature Communications, 1, 94 (2010)

6. "Ferroelastic switching for nanoscale nonvolatile magnetoelectric devices," Nature Materials, 9, 309 (2010)

Chang-Beom Eom is the Theodore H. Geballe Professor and Harvey D. Spangler Distinguished Professor in the College of Engineering and Physics.  He received his Ph.D. in Materials Science and Engineering from Stanford University in 1991. He then spent two years at AT&T Bell Laboratories in Murray Hill, New Jersey as a postdoctoral member of the technical staff, before joining Duke University in 1993 as an associate professor. He joined the University of Wisconsin-Madison in 2000 as part of a cluster hire in nanophase inorganic materials, and he has since directed the Oxide Laboratory ( His research focuses on epitaxial thin film heterostructures of complex oxides, including ferroelectrics, piezoelectrics, multiferroics, superconductors, and novel two-dimensional electron gases at oxide interfaces, with an emphasis on understanding fundamental solid state phenomena and developing novel device applications. Eom has authored over 290 publications with over 11,000 citations and has an h-index of 58. He also holds four patents. He received the National Science Foundation Young Investigator Award in 1994, the David & Lucile Packard Fellowship in 1995 and the 2007 Ho-Am Prize in Engineering. He is a fellow of the American Physical Society and of the Materials Research Society (MRS).  He serves on the MRS Board of Directors and is an Associate Editor of APL-Materials.